Samsung 860 EVO 2.5″ 1000 GB Serial ATA III MLC
Samsung 860 EVO
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Designed for everyday computing, the Samsung 860 EVO is powered by our latest V-NAND technology and a robust algorithm-based Samsung controller to handle the workloads of mainstream PCs and laptops. Get fast, enduring performance with exceptional reliability and expanded compatibility.
Samsung V-NAND Technology
Samsung’s V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
Fast Read/Write Performance
The 860 PRO performs at sequential write speeds up to 520 MB/s and sequential read speeds up to 550 MB/s with a robust a robust algorithm-based Samsung MJX controller (up to 1 GHz).
Relentless Endurance
With an industry warranty offering up to 2,400 Total Bytes Written (TBW) for 5 years, and our V-NAND flash’s higher endurance compared to conventional planar type NAND flash, our 860 PRO SSDs can consistently meet the needs of high-end use and heavy workloads with ease, such as safely storing and rendering 4K videos and 3D data.
| Hard drive | |
|---|---|
| SSD capacity | 1000 GB |
| Memory type | MLC |
| Data transmission | |
| Read speed | 550 MB/s |
| Write speed | 520 MB/s |
| Random write (4KB) | 90000 IOPS |
| Random read (4KB) | 98000 IOPS |
| Data transfer rate | 6 Gbit/s |
| Security | |
| Security algorithms | 256-bit AES |
| Endurance | |
| Mean time between failures (MTBF) | 1500000 h |
| Performance | |
| Interface | Serial ATA III |
| Component for | PC/notebook |
| Controller type | Samsung MJX |
| NAND flash type | MLC (Multi Level Cell) |
| Opal SSC 2.0 | Yes |
| IEEE 1667 | Yes |
| DevSlp (device sleep) support | Yes |
| Active garbage collection | Yes |
| SSD capacity | 1000 GB |
| Security algorithms | 256-bit AES |
| S.M.A.R.T. support | Yes |
| Read speed | 550 MB/s |
| TRIM support | Yes |
| Write speed | 520 MB/s |
| Memory type | MLC |
| Random write (4KB) | 90000 IOPS |
| Random read (4KB) | 98000 IOPS |
| Mean time between failures (MTBF) | 1500000 h |
| Data transfer rate | 6 Gbit/s |
| Design | |
| Component for | PC/notebook |
| Product colour | Black |
| SSD form factor | 2.5″ |
| Features | |
| Interface | Serial ATA III |
| Component for | PC/notebook |
| Controller type | Samsung MJX |
| NAND flash type | MLC (Multi Level Cell) |
| Opal SSC 2.0 | Yes |
| IEEE 1667 | Yes |
| DevSlp (device sleep) support | Yes |
| Active garbage collection | Yes |
| SSD capacity | 1000 GB |
| Security algorithms | 256-bit AES |
| S.M.A.R.T. support | Yes |
| Read speed | 550 MB/s |
| TRIM support | Yes |
| Write speed | 520 MB/s |
| Memory type | MLC |
| Random write (4KB) | 90000 IOPS |
| Random read (4KB) | 98000 IOPS |
| Mean time between failures (MTBF) | 1500000 h |
| Data transfer rate | 6 Gbit/s |
| SSD form factor | 2.5″ |
| Power | |
| Power consumption (average) | 3 W |
| Power consumption (max) | 4 W |
| Power consumption DevSlp (device sleep) | 2 mW |
| Power consumption (idle) | 0.5 W |
| Operational conditions | |
| Operating temperature (T-T) | 0 – 70 °C |
| Storage temperature (T-T) | -40 – 85 °C |
| Operating relative humidity (H-H) | 5 – 95% |
| Storage relative humidity (H-H) | 5 – 95% |
| Operating shock | 1500 G |
| Non-operating shock | 1500 G |
| Technical details | |
| Interface | Serial ATA III |
| S.M.A.R.T. support | Yes |
| Operating temperature (T-T) | 0 – 70 °C |
| TRIM support | Yes |
| Storage temperature (T-T) | -40 – 85 °C |
| Operating relative humidity (H-H) | 5 – 95% |
| Storage relative humidity (H-H) | 5 – 95% |
| Operating shock | 1500 G |
| Non-operating shock | 1500 G |
| Product colour | Black |
| SSD form factor | 2.5″ |
| Weight & dimensions | |
| Width | 100 mm |
| Weight | 86.18 g |
| Height | 70.1 mm |
| Depth | 6.86 mm |
| Other features | |
| Product colour | Black |
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